High Performance Printed Ultraviolet-Sensors Based on Indium--Tin-Oxide Nanocrystals

A UV sensor was fabricated by screen printing indium--tin-oxide (ITO) nanocrystals on to quart glass. The initial printed ITO layer showed a resistivity too high for sensing applications, but considerable improvements were achieved through annealing under external pressure. The effects of this press...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 52; no. 11; pp. 115001 - 115001-5
Main Authors Koo, Jieun, Park, Seunghwan, Lee, Woong, Cho, Youngji, Lee, Hyojong, Lee, Sangtae, Chang, Jiho
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2013
Subjects
Annealing
Coiling
Electrical resistivity
External pressure
Feasibility
Illumination
Nanocrystals
Sensors
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Summary:A UV sensor was fabricated by screen printing indium--tin-oxide (ITO) nanocrystals on to quart glass. The initial printed ITO layer showed a resistivity too high for sensing applications, but considerable improvements were achieved through annealing under external pressure. The effects of this pressurized annealing were investigated using a commercial ITO film. The annealing aided the development of low-resistivity ITO through the repression of complex defects. The feasibility of the ITO sensor was confirmed through annealing coil-shaped ITO sensors under different conditions. Pressurized annealing greatly enhanced the output signal intensity under similar UV illumination conditions.
Bibliography:The resistivity, carrier concentration and mobility variation of ITO films annealed (a) without external pressure and (b) with external pressure at the elevating annealing temperatures. (Color online) EBSD image of ITO films. (a) As-deposited (sample A), (b) annealed without external pressure (sample B), and (c) annealed with external pressure (sample C). Absorption spectra of ITO films. As-deposited (sample A), annealed without external pressure (sample B), and annealed with external pressure (sample C). $I$--$V$ characteristics of as-printed (sample D), annealed in the air (sample E) and annealed under an external pressure (sample F) ITO layers. The inset is the photograph of the printed ITO sensor. Annealing conditions were 600 °C and 30 min. The external pressure was 0.2 MPa. Results of UV-sensor operation. Sample D (as-printed one), sample E (annealed one without external pressure), and sample F (annealed one under an external pressure). UV-LED ($\lambda = 340$ nm) with an optical output power of 0.8 mW was used as a light source.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.115001