Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

Co–Al-layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO-coated glass substrates. And then the small molecule atrazine was adsorbed on the Co–Al LDHs film by impregnation method. Current–voltage characteristics revealed nonvolatile resistive switching in Co–Al L...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 32; no. 7; pp. 8304 - 8316
Main Authors Sun, Yanmei, Li, Li, Shi, Keying
Format Journal Article
LanguageEnglish
Published New York Springer US 01.04.2021
Springer Nature B.V
Subjects
Adsorption
Atrazine
Characterization and Evaluation of Materials
Chemistry and Materials Science
Current voltage characteristics
Glass substrates
Hydroxides
Materials Science
Optical and Electronic Materials
Switching
Thin films
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Summary:Co–Al-layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO-coated glass substrates. And then the small molecule atrazine was adsorbed on the Co–Al LDHs film by impregnation method. Current–voltage characteristics revealed nonvolatile resistive switching in Co–Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al LDHs film has been investigated. By varying the atrazine adsorbed content in Co–Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current–voltage curves.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-05365-z