Thin film silicon solar cells on upgraded metallurgical silicon substrates prepared by liquid phase epitaxy
Thin layers of about 30 μm thickness were grown on upgraded metallurgical (UMG) silicon substrates by liquid phase epitaxy (LPE) from an indium solvent. Instead of adding electronic grade silicon to the solution, a melt back step was carried out before each growth process to supply silicon to the me...
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Published in | Solar energy materials and solar cells Vol. 74; no. 1; pp. 219 - 223 |
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Main Authors | , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.10.2002
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Thin layers of about 30
μm thickness were grown on upgraded metallurgical (UMG) silicon substrates by liquid phase epitaxy (LPE) from an indium solvent. Instead of adding electronic grade silicon to the solution, a melt back step was carried out before each growth process to supply silicon to the melt from the UMG-Si wafers. We present an LPE technology which is capable to be directly scaled up to a few hundred layers per run. Solar cells have been fabricated based on phosphorous paste diffusion with efficiencies up to
η=10.0%. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/S0927-0248(02)00074-0 |