Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer

We have calculated the thermal conductive properties and rate of temperature increase of a semiconductor laser on a polymer substrate. The temperature rises to 27 °C on the polymer interposer and the heat radiation effect is almost saturated in the case where the Au film has a thickness of 500 nm at...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 52; no. 4; pp. 04CG05 - 04CG05-5
Main Authors Amano, Takeru, Ukita, Shigenari, Ma, Laina, Aoyagi, Masahiro, Sugaya, Takeyoshi, Komori, Kazuhiro
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2013
Subjects
Emission
Gold
Heat distribution
Heat radiation
Lasers
Mathematical analysis
Scattering
Semiconductor lasers
Thresholds
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Summary:We have calculated the thermal conductive properties and rate of temperature increase of a semiconductor laser on a polymer substrate. The temperature rises to 27 °C on the polymer interposer and the heat radiation effect is almost saturated in the case where the Au film has a thickness of 500 nm at 10 mW. Also, we have fabricated a 1.3 μm quantum dot (QD) laser with a stripe structure for the polymer interposer. We can achieve a low operating current threshold of 7 mA for the QD laser with a high mirror loss of 16 cm -1 at 1.3 μm emission because of the high quality of the QDs and the low scattering loss structure. Moreover, we have measured the heat distribution and rising temperature speed of a QD laser on a polymer substrate. These results indicate that we need to realize a high-efficiency laser source to achieve high transmission speeds in the future.
Bibliography:(Color online) (a) Thermal distribution and (b) rising temperature characteristics. Thermal cross-talk characteristics at (a) 10 and (b) 100 mW. (Color online) Calculated (a) thermal distribution and (b) temperature characteristic of temperature rising speed. Light output versus current of the QD laser with a 0.75 mm cavity and cleaved facet. Threshold current density versus inverse cavity length for the nine-layered QD laser. (Color online) Rising temperature speeds at injection powers of 20 and 50 mW. $I$--$V$ and $I$--$L$ characteristics before and after QD laser bonding on the polymer. Calculation result of laser operating limitation in server computer.
ObjectType-Article-1
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.04CG05