Low temperature anomalies of spin susceptibility in heavily phosphorus doped silicon

We have measured the absolute spin susceptibility of Si:P around the critical concentration for the metal-non metal transition. The spin susceptibility reveals an anomalous increase at very low temperatures on both metallic and non metallic regimes.

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Bibliographic Details
Published inSolid state communications Vol. 56; no. 7; pp. 607 - 608
Main Authors Ikehata, S., Kobayashi, S.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.01.1985
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron paramagnetic resonance and relaxation
Exact sciences and technology
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Physics
Semiconductor materials
Impurity density
Impurity
Spin susceptibility
Phosphorus
Silicon
Electronic transition
Electron paramagnetic resonance
Experimental study
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Summary:We have measured the absolute spin susceptibility of Si:P around the critical concentration for the metal-non metal transition. The spin susceptibility reveals an anomalous increase at very low temperatures on both metallic and non metallic regimes.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(85)90966-4