Novel pseudomorphic structure on Si substrate grown by metalorganic vapor phase epitaxy

• Published in: Journal of crystal growth Vol. 145; no. 1; pp. 924 - 928
• Main Authors: Ohori, Tatsuya, Eshita, Takashi, Miyagaki, Shinji, Kasai, Kazumi, Komeno, Junji
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.1994; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Ternary compound; Cross section; Epitaxy; Roughness; Experimental study; Layer thickness; III-V compound; Thin film; Gallium Arsenides; Growth from vapor; Substrate; High electron mobility transistor; Manufacturing process; Electron mobility; Silicon; Indium Arsenides; Strained superlattice; Comparative study; Organic compounds
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)91165-7

We propose a novel pseudomorphic InGaAs channel selectively doped structure grown on Si substrates and investigate its characteristics. The proposed structure consists of a Si-doped strained layer superlattice (SLS), an InGaAs channel layer, an SLS buffer layer, and a GaAs buffer layer. We investigated the SLS structure dependence of mobility. The mobility was enhanced by the reduction of the threading dislocation density. We compared the characteristics of high electron mobility transistors (HEMTs) fabricated using the epitaxial structures and conventional structures processed with thermal cycle annealing (TCA). The HEMTs with the proposed structure showed better characteristics than those processed by TCA, indicating the efficiency of the structure.