Preparation and characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 28; no. 4; pp. 431 - 438
• Main Authors: Taguchi, Tomitsugu, Igawa, Naoki, Yamamoto, Hiroyuki, Shamoto, Shin-ichi, Jitsukawa, Shiro
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2005; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; EELS; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Nanotube; Nanotubes; Physics; SiC; TEM; 68.37.Lp; 81.07.De; Nanotube; EELS; 81.05.Uw; 79.20.Uv; SiC; TEM; 79.20.Uv SiC; Nanotubes; Carbon nanotubes; Silicon carbides; XRD; Dispersive spectrometry; Heat treatments; Electron energy loss spectra; Transmission electron microscopy; Synthesis; Coaxial configuration
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2005.05.048

Preparation conditions of single-phase SiC nanotubes and C-SiC coaxial nanotubes were investigated. The characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes were carried out. The SiC nanowires, which were made of the catenated SiC grains of 50–200 nm in diameter, were obtained in carbon nanotubes reacted at 1450 °C. The only C-SiC coaxial nanotubes were formed at 1300 °C. A few single-phase SiC nantoubes were synthesized at 1200 °C for 100 h. More than half number of nanotubes reacted at 1200 °C for 100 h were altered to single-phase SiC nantoubes by heat treatment of 600 °C for 1 h in air since the remained carbon was removed. The energy dispersive X-ray spectroscopy analysis revealed that the atomic ratio of Si to C in single-phase SiC nanotubes was almost 1; these single-phase SiC nanotubes consisted of near-stoichiometric SiC grains.