Electrochemical deposition of ZnFeS thin film semiconductors on tin oxide substrates

The electrodeposition of ZnFeS thin film semiconductors on tin oxide substrates in diethyleneglycol solution containing S 8, FeCl 2 · 4H 2O and ZnCl 2 reagents was investigated. The potential region, where formation of the ZnFeS semiconductor occurs, was singled out between −0.6 and −1.0 V(SCE). Amo...

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Published inSolar energy materials and solar cells Vol. 37; no. 1; pp. 43 - 53
Main Authors Kashyout, A.B., Aricò, A.S., Monforte, G., Crea, F., Antonucci, V., Giordano, N.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.1995
Elsevier
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Solar cell
Semiconductor materials
Electrochemical method
Preparation
Optical characteristic
Teranry compound
Zinc Sulfides
Microstructure
Iron Sulfides
Iron Zinc Sulfides Mixed
Electrical characteristic
Thin film
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Summary:The electrodeposition of ZnFeS thin film semiconductors on tin oxide substrates in diethyleneglycol solution containing S 8, FeCl 2 · 4H 2O and ZnCl 2 reagents was investigated. The potential region, where formation of the ZnFeS semiconductor occurs, was singled out between −0.6 and −1.0 V(SCE). Amorphous films were obtained after the deposition. Conversion from amorphous to a crystalline structure was achieved by annealing the semiconductors at 285°C in Argon. Chemical and morphology characteristics were investigated by EDAX and SEM analyses. A direct relationship was observed between the Fe and Zn concentration in the electrodeposition bath and the Zn Fe ratio in the deposits. Thin film XRD analysis showed the crystallographic structures of sphalerite and pyrrhotite. The optical properties of the thin film semiconductors changed as function of the Zn and Fe contents in the solution and in the films. The indirect energy gap transition varied from 0.37 to 3.1 eV, as the Zn Fe ratio in the solution was increased. The suitable optical properties of the thin films and the low-cost preparation procedure appear as promising characteristics for the application of the ZnFeS system in solar energy conversion devices.
ISSN:0927-0248
1879-3398
DOI:10.1016/0927-0248(94)00196-0