Three dimensional atom probe imaging of GaAsSb quantum rings

Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the cen...

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Published inUltramicroscopy Vol. 111; no. 8; pp. 1073 - 1076
Main Authors Beltrán, A.M., Marquis, E.A., Taboada, A.G., Ripalda, J.M., García, J.M., Molina, S.I.
Format Journal Article
LanguageEnglish
Published Netherlands Elsevier B.V 01.07.2011
Subjects
Atom-probe tomography
Capping
Gallium arsenide
GaSb
Imaging
Molecular beam epitaxy
Nanocomposites
Nanomaterials
Nanostructure
Quantum ring
Segregations
Transmission electron microscopy
GaSb
Transmission electron microscopy
Quantum ring
Atom-probe tomography
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Summary:Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAsxSb1−x quantum rings of 20–30nm in diameter with x∼0.33. ► Atom-probe tomography resolves QR morphology of GaSb self-assembled GaSb buried nanostructures. ► From atom-probe tomography compositional distribution has been obtained. ► Strong segregation and morphological changes are observed with respect to uncapped QR.
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ISSN:0304-3991
1879-2723
DOI:10.1016/j.ultramic.2011.03.018