Elastic distortions of strained layers grown epitaxially in arbitrary directions

• Published in: Journal of crystal growth Vol. 114; no. 4; pp. 647 - 655
• Main Author: Anastassakis, E.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.1991; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Crystal growth; Epitaxy; Mismatch lattice; Theoretical study; Elastic deformation; Lattice parameters; Strained superlattice; Structure relaxation; Thin film; Heterojunction

We consider the elastic distortions which are due to lattice mismatch between epitaxial layers and substrates. The growth is assumed to take place in an arbitrary crystallographic direction. Explicit forms are obtained for the deformation of the unit cell and its two components, i.e., the angular di...