Elastic distortions of strained layers grown epitaxially in arbitrary directions

We consider the elastic distortions which are due to lattice mismatch between epitaxial layers and substrates. The growth is assumed to take place in an arbitrary crystallographic direction. Explicit forms are obtained for the deformation of the unit cell and its two components, i.e., the angular di...

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Bibliographic Details
Published inJournal of crystal growth Vol. 114; no. 4; pp. 647 - 655
Main Author Anastassakis, E.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.12.1991
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Crystal growth
Epitaxy
Mismatch lattice
Theoretical study
Elastic deformation
Lattice parameters
Strained superlattice
Structure relaxation
Thin film
Heterojunction
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Summary:We consider the elastic distortions which are due to lattice mismatch between epitaxial layers and substrates. The growth is assumed to take place in an arbitrary crystallographic direction. Explicit forms are obtained for the deformation of the unit cell and its two components, i.e., the angular distortions (symmetric strain) and the rigid-body rotation (antisymmetric strain). The correction factors which connect the relaxed lattice constants of the layer with observables from X-ray diffractometry are obtained in analytical forms. As shown through specific applications, the results agree with those obtained numerically in the literature.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)90411-W