MOCVD methods for fabricating GaAs quantum wires and quantum dots

• Published in: Journal of crystal growth Vol. 124; no. 1; pp. 493 - 496
• Main Authors: Fukui, Takashi, Saito, Hisao, Kasu, Makoto, Ando, Seigo
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.1992; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Scanning electron microscopy; Quantum dot; Semiconductor materials; Epitaxy; Solid solid interface; Photoluminescence; Aluminium Gallium Arsenides Mixed; Organometallic compound; Quantum effect; Experimental study; Chemical vapor deposition; Inorganic compound; Gallium Arsenides; Growth from vapor; Aluminium Arsenides; Transmission electron microscopy; Quantum wire; Optical absorption; Superlattice
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(92)90505-D

Semiconductor low-dimensional structures such as quantum wires and quantum dots fabricated by metalorganic chemical vapor deposition (MOCVD) are reported. GaAs/AlAs quantum wire arrays including fractional-layer superlattices were grown on (001) GaAs vicinal surfaces. Uniform lateral superlattices were observed by transmission electron microscopy. However, polarization-dependent photoluminescence and the optical absorption spectra suggest that significant alloying occurs in AlAs/GaAs vertical interfaces. GaAs tetrahedral quantum dots buried in AlGaAs were also fabricated on a SiO 2 masked (111)B GaAs substrate partially etched to a triangular shape. First, AlGaAs truncated tetrahedral structures with three {110} facets were grown on GaAs triangular areas. Next, GaAs dot structures were sequentially grown on top of the AlGaAs truncated tetrahedron. Finally, AlGaAs was over-grown on {110} sidewall facets with a different growth condition. We observed large quantum size effects for about 100 nm TQD in low temperature photoluminescence, which is in good agreement with calculations.