Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment

The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias field...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 40; no. 12; pp. 2344 - 2351
Main Authors Kingsley, L.E., Donaldson, W.R.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.12.1993
Institute of Electrical and Electronics Engineers
Subjects
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
Applied sciences
CARRIER DENSITY
Cathodes
DATA
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
Electronics
ENGINEERING
Exact sciences and technology
Gallium arsenide
Gunn devices
INFORMATION
Laboratories
Laser modes
LASER RADIATION
Numerical analysis
NUMERICAL DATA
Optical pulses
Optical switches
Optoelectronic devices
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMICONDUCTOR SWITCHES
SWITCHES
THEORETICAL DATA
Zero voltage switching
Gallium Arsenides
Semiconductor device
Electric field
Photoconducting device
Optoelectronic device
Selector switch
Modeling
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Summary:The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias fields above approximately 10 kV/cm. At these biases, the switch also remained conductive for a much longer time ( approximately 100 ns) than the material recombination time ( approximately 1 ns). A model which includes field-dependent mobility was developed to explain this data. Simulation of the electric field profile across the switch indicates that high-field domains which form at the switch cathode are the result of negative differential resistance.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.249485