Photosensitivity of silica glass with germanium studied by photoinduced of thermally stimulated luminescence with vacuum ultraviolet radiation

• Published in: Journal of non-crystalline solids Vol. 324; no. 1; pp. 21 - 28
• Main Authors: Trukhin, Anatoly, Poumellec, Bertrand
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.08.2003; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Other solid inorganic materials; Photoluminescence; Physics; Thermoluminescence; P210; 78.55.−Hx; 42.70.Ce; S160; L220; G140; Photosensitivity; Inorganic compounds; Doping; Photoluminescence; Glass; Defect recombination; Experimental study; Silica; Luminescence decay; Impurities; Illumination; Extreme ultraviolet radiation; Germanium additions; Thermoluminescence
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/S0022-3093(03)00224-2

Photosensitivity of the germanium-doped silica was studied through kinetics of recombination of the created defects in isothermal and thermally stimulated luminescence (TSL) regimes. The main observed luminescence contains bands mainly due to Ge oxygen deficient center. The maximum of photosensitivity corresponds to the high-energy part of the 7.6 eV band. The growth of TSL intensity is almost linear for the case of excitation through monochromatic light and growth with saturation in the case of excitation with white light. The efficiency of formation of TSL peaks increases with an increase of the temperature. The result was explained as multi-step process of photochemical dissociation and product separation by thermally stimulated diffusion.