Analytical and simulation studies of failure modes in SRAMs using high electron mobility transistors

• Published in: IEEE transactions on computer-aided design of integrated circuits and systems Vol. 12; no. 12; pp. 1885 - 1896
• Main Authors: Mohan, S., Mazumder, P.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.1993; Institute of Electrical and Electronics Engineers
• Subjects: Analytical models; Applied sciences; Circuit faults; Circuit testing; Electronics; Exact sciences and technology; Failure analysis; Gallium arsenide; HEMTs; Integrated circuits; Integrated circuits by function (including memories and processors); Materials testing; MODFETs; Process design; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Binary compound; Theoretical study; Modeling; Static storage; Analytic representation; Gallium Arsenides; High electron mobility transistor; Random access memory(RAM); Failure analysis; Integrated circuit; Equivalent circuit; Numerical simulation; Computer aided design; Fault diagnostic

Gallium arsenide memories, which are now beginning to be used commercially, are subject to certain unusual parametric faults, not normally seen in silicon or other memory devices. This paper studies the behavior of gallium arsenide high electron mobility transistor (HEMT) memories in the presence of...