Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect

Effect of electromigration on the interfacial structure of solder interconnects was examined in a Sn-Bi/Cu interconnect system. At current densities above 10^sup 4^ A/cm^sup 2^, Bi migrated along the direction of the electron flow in the solder alloy. A continuous Bi layer was found at the solder in...

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Bibliographic Details
Published inJournal of electronic materials Vol. 34; no. 11; pp. 1363 - 1367
Main Authors YANG, Q. L, SHANG, J. K
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.11.2005
Springer Nature B.V
Subjects
Applied sciences
Chemical elements
Condensed matter: structure, mechanical and thermal properties
Electronics
Exact sciences and technology
Materials
Materials science
Microelectronics
Microstructure
Physics
Soldering
Transport properties of condensed matter (nonelectronic)
Anode
Cathode
Segregation
Intermetallic compound
Solder metal
Transition metal
Layer
interconnect
Solder
Electromigration
Growth mechanism
Diffusion barrier
Electrodiffusion
Copper
Current density
Interface
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Summary:Effect of electromigration on the interfacial structure of solder interconnects was examined in a Sn-Bi/Cu interconnect system. At current densities above 10^sup 4^ A/cm^sup 2^, Bi migrated along the direction of the electron flow in the solder alloy. A continuous Bi layer was found at the solder interface on the anode side, while a Sn-rich region formed at the cathode side of the electrical connection. The presence of the Bi layer inhibited further growth of Cu-Sn intermetallic phase at the interface by acting as a diffusion barrier to the reacting species. [PUBLICATION ABSTRACT]
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-005-0191-5