Carbon incorporation in InGaAs grown on (311)A oriented substrates by metalorganic chemical vapor deposition

• Published in: Journal of crystal growth Vol. 158; no. 4; pp. 430 - 436
• Main Authors: Ito, Hiroshi, Kurishima, Kenji, Watanabe, Noriyuki
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.1996; Elsevier
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Gallium arsenides; Inorganic compounds; Epitaxial layers; Semiconductor materials; Impurity density; Ternary compounds; Crystal growth from vapors; Experimental study; Carbon additions; MOCVD; Crystal doping; Indium arsenides; Substrates; Chemical composition; Carrier mobility; Carrier density
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(95)00543-9

Carbon incorporation in InGaAs is systematically investigated using (311)A and (100) oriented substrates. Basic growth behaviors such as the etching characteristics by CBr 4 and the V III ratio dependence of the hole concentration are clarified. Although the hole concentrations decrease with increasing In composition, it is found that the hole concentrations in layers grown on (311)A substrates are several times higher than those grown on (100) substrates. From mobility and atomic concentration measurements, the hole concentration decrease with increasing In composition is attributed to a decrease in the efficiency of C incorporation into InGaAs. A numerical analysis that assumes In atoms enhance the C source dissociation from the substrate surface reveals that the higher surface step density on the (311)A oriented substrate is the dominant factor for higher C incorporation efficiency into InGaAs grown on those substrates.