Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 42; no. 10; pp. 2765 - 2767
• Main Authors: Bordel, Damien, Rajesh, Mohan, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Guimard, Denis, Arakawa, Yasuhiko
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2010; Elsevier
• Subjects: Antimony; Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; GaAs; GeOI; Materials science; Methods of nanofabrication; Molecular electronics, nanoelectronics; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum dots; Self-assembly; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon photonics; Silicon photonics; GeOI; Antimony; Quantum dots; GaAs; Buffer layer; Gallium arsenides; Ground states; Photonic device; MOCVD; Indium arsenides; III-V compound; Self-assembly; Growth mechanism; Germanium; Silicon; Nanostructured materials; III-V semiconductors
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2009.11.096

We report the growth of self-assembled InAs/GaAs quantum dots (QDs) on germanium-on-insulator-on-silicon (GeOI/Si) substrate by antimony-mediated metal organic chemical vapor deposition. The influence of various growth procedures for the GaAs buffer layer on the QD formation and optical quality was investigated. We obtained QDs with density above 10 10 cm −2, and ground state emission in the 1.3 μm band at room temperature. These results demonstrate the promising suitability of germanium-on-insulator for the monolithic integration of QD-based and other GaAs-based photonic devices on silicon.