Low temperature growth of ZnSe/GaAs using hot molecular beams

Epitaxial layers of ZnSe/GaAs were grown successfully at the growth temperature as low as of 100°C using hot molecular beams generated by post-heating at 600°C both for Zn and Se. Although having rather inferior surface morphology, ZnSe epilayers grown at 100–150°C showed good low-temperature photol...

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Bibliographic Details
Published inJournal of crystal growth Vol. 117; no. 1; pp. 125 - 128
Main Authors Ohishi, Masakazu, Saito, Hiroshi, Yoneta, Minoru, Fujisaki, Yasunori
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.1992
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Epitaxial layers of ZnSe/GaAs were grown successfully at the growth temperature as low as of 100°C using hot molecular beams generated by post-heating at 600°C both for Zn and Se. Although having rather inferior surface morphology, ZnSe epilayers grown at 100–150°C showed good low-temperature photoluminescence properties. The relation between the surface morphology and the growth rate, and also the role of the post-heated Se beam are discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(92)90729-3