CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

• Published in: Applied surface science Vol. 255; no. 15; pp. 6786 - 6789
• Main Authors: Rotaru, Andrei, Mietlarek-Kropidłowska, Anna, Constantinescu, Catalin, Scărişoreanu, Nicu, Dumitru, Marius, Strankowski, Michal, Rotaru, Petre, Ion, Valentin, Vasiliu, Cristina, Becker, Barbara, Dinescu, Maria
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2009; Elsevier
• Subjects: Cadmium(II) coordination compound; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; MAPLE; Physics; Precursor for CdS layers; Spectroscopic-ellipsometry; Thermal treatment; Cadmium(II) coordination compound; Spectroscopic-ellipsometry; Precursor for CdS layers; MAPLE; Thermal treatment; Cadmium; Inorganic compounds; Semiconductor materials; Transition element compounds; Cadmium sulfide; Heat treatments; Ellipsometry; Thin films; Transition elements
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2009.02.062

Thin films of [Cd{SSi(O–Bu t ) 3}(S 2CNEt 2)] 2, precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.