Sublattice ordering in GaInP and AlGaInP: Effects of substrate orientations

• Published in: Journal of crystal growth Vol. 99; no. 1; pp. 60 - 67
• Main Authors: Suzuki, Tohru, Gomyo, Akiko, Iijima, Sumio
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 1990; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(90)90484-3

GsAs substrate surface orientation effects on the CuPt type 〈 1 21 1 21 1 2 〉 superlattice (SL) on the group III sublattice in GaInP and AlGaInP grown by metalorganic vapor phase epitaxy were described in detail. Among the four equivalent direction SL variants, whose directions are [ 1 11]: v 1, [1 11 ]: v 2, [11 1 ]: v 3 and [ 111 ]: v 4, a TED intensity relation, I(v 3) = I(v 4) = 0, was consistently observed for epilayers grown on exact (001) and vicinal (001) GaAs substrates, where I(v i ) denotes the intensity of v i direction SL variant. As for I(v 1) and I(v 2), symmetric ( I(v 1) ≅ I(v 2)) and asymmetric ( I(v 1) ≠ I(v 2)) intensity relations were observed for epilayers grown on GaAs substrates with symmetric and asymmetric surface orientation relations with v 1 and v 2 directions, respectively. A slight misorientation towards the v 1 direction enhanced the v 1 direction SL formation. Ga 0.5In 0.5P epilayers grown on ( 111 ) and (110) GaAs substrates did not show any 〈 1 21 1 21 1 2 〉 type SLs. These experimental results are discussed.