Effect of surface composition on the growth rates of silicon carbide by CVD

It has been reported that a thick intermediate layer deposited on graphite substrates, upon which polycrystalline SiC is grown by the CVD technique, increases the growth rate. In the present studies the composition of the coated graphite and CVD layer on it have been examined with the use of AES, SI...

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Bibliographic Details
Published inJournal of crystal growth Vol. 108; no. 1; pp. 335 - 339
Main Authors Kaneto, Tsutomu, Okuno, Takashi, Kabe, Isao
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.01.1991
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Crystal growth
Silicon
Kinetics
Experimental study
X ray diffraction
Chemical vapor deposition
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Summary:It has been reported that a thick intermediate layer deposited on graphite substrates, upon which polycrystalline SiC is grown by the CVD technique, increases the growth rate. In the present studies the composition of the coated graphite and CVD layer on it have been examined with the use of AES, SIMS and low incident angle XRD, and the results have been correlated to the growth rates.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)90381-E