Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films

• Published in: Journal of crystal growth Vol. 111; no. 1; pp. 1024 - 1028
• Main Authors: Hoke, W.E., Lemonias, P.J., Weir, D.G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.1991; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vacuum deposition; Crystal growth; Plasma; Gallium Nitrides; Indium Nitrides; Molecular beam condensation; Epitaxy; Wurtzite structure; Instrumentation; Experimental study; Inorganic compound; Thin film

An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N 2 plasma region is deduced as a function of operating conditions. The plasma source has been used to grow hexag...