Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films

An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N 2 plasma region is deduced as a function of operating conditions. The plasma source has been used to grow hexag...

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Bibliographic Details
Published inJournal of crystal growth Vol. 111; no. 1; pp. 1024 - 1028
Main Authors Hoke, W.E., Lemonias, P.J., Weir, D.G.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.05.1991
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Vacuum deposition
Crystal growth
Plasma
Gallium Nitrides
Indium Nitrides
Molecular beam condensation
Epitaxy
Wurtzite structure
Instrumentation
Experimental study
Inorganic compound
Thin film
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Summary:An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N 2 plasma region is deduced as a function of operating conditions. The plasma source has been used to grow hexagonal wurtzite films of InN and GaN. The film-substrate interface is more abrupt for GaN than InN films. For site competition the active nitrogen species from the plasma is found to incorporate more readily than As 2.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)91125-T