Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films
An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N 2 plasma region is deduced as a function of operating conditions. The plasma source has been used to grow hexag...
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Published in | Journal of crystal growth Vol. 111; no. 1; pp. 1024 - 1028 |
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Main Authors | , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.05.1991
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N
2 plasma region is deduced as a function of operating conditions. The plasma source has been used to grow hexagonal wurtzite films of InN and GaN. The film-substrate interface is more abrupt for GaN than InN films. For site competition the active nitrogen species from the plasma is found to incorporate more readily than As
2. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/0022-0248(91)91125-T |