Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films
An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N 2 plasma region is deduced as a function of operating conditions. The plasma source has been used to grow hexag...
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| Published in | Journal of crystal growth Vol. 111; no. 1; pp. 1024 - 1028 |
|---|---|
| Main Authors | , , |
| Format | Journal Article Conference Proceeding |
| Language | English |
| Published |
Amsterdam
Elsevier B.V
01.05.1991
Elsevier |
| Subjects | |
| Online Access | Get full text |
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| Abstract | An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N
2 plasma region is deduced as a function of operating conditions. The plasma source has been used to grow hexagonal wurtzite films of InN and GaN. The film-substrate interface is more abrupt for GaN than InN films. For site competition the active nitrogen species from the plasma is found to incorporate more readily than As
2. |
|---|---|
| AbstractList | An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N
2 plasma region is deduced as a function of operating conditions. The plasma source has been used to grow hexagonal wurtzite films of InN and GaN. The film-substrate interface is more abrupt for GaN than InN films. For site competition the active nitrogen species from the plasma is found to incorporate more readily than As
2. |
| Author | Lemonias, P.J. Hoke, W.E. Weir, D.G. |
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| Keywords | Crystal growth Plasma Gallium Nitrides Indium Nitrides Molecular beam condensation Epitaxy Wurtzite structure Instrumentation Experimental study Inorganic compound Thin film |
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| References | Tansley, Foley (BIB1) 1984; 20 Sato, Sato (BIB7) 1989; 28 Trainor, Rose (BIB5) 1974; 3 Lyutaya, Bukhanevich (BIB3) 1962; 7 Wright, Winkler (BIB11) 1968 Hovel, Cuomo (BIB8) 1972; 20 Bardos, Musil, Taras (BIB13) 1982; 15 Wakahara, Yoshida (BIB6) 1989; 54 MacChesney, Bridenbaugh, O'Connor (BIB2) 1970; 5 Osamura, Naka, Murakami (BIB4) 1975; 46 Kubota, Kobayashi, Fujimoto (BIB10) 1989; 66 Yoshida, Misawa, Gonda (BIB14) 1983; B1 Berkowitz, Chupka, Kistiakowsky (BIB12) 1956; 25 Sullivan, Parsons, Westra, Brett (BIB9) 1988; 64 Wakahara (10.1016/0022-0248(91)91125-T_BIB6) 1989; 54 Sato (10.1016/0022-0248(91)91125-T_BIB7) 1989; 28 Kubota (10.1016/0022-0248(91)91125-T_BIB10) 1989; 66 Lyutaya (10.1016/0022-0248(91)91125-T_BIB3) 1962; 7 Sullivan (10.1016/0022-0248(91)91125-T_BIB9) 1988; 64 Hovel (10.1016/0022-0248(91)91125-T_BIB8) 1972; 20 Trainor (10.1016/0022-0248(91)91125-T_BIB5) 1974; 3 Wright (10.1016/0022-0248(91)91125-T_BIB11) 1968 Bardos (10.1016/0022-0248(91)91125-T_BIB13) 1982; 15 Berkowitz (10.1016/0022-0248(91)91125-T_BIB12) 1956; 25 MacChesney (10.1016/0022-0248(91)91125-T_BIB2) 1970; 5 Yoshida (10.1016/0022-0248(91)91125-T_BIB14) 1983; B1 Tansley (10.1016/0022-0248(91)91125-T_BIB1) 1984; 20 Osamura (10.1016/0022-0248(91)91125-T_BIB4) 1975; 46 |
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| SubjectTerms | Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Vacuum deposition |
| Title | Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films |
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