Radical-assisted metalorganic chemical vapor deposition of ZnSe

Radical-assisted metalorganic chemical vapor deposition (MOCVD) of ZnSe has been performed by using diethylzinc (DEZn) and diethylselenide (DESe) as a source and azo-t-butane ((t-C4H9)2N2) and nitrogen trifluoride (NF3) as co-reactants. The growth rate was significantly increased in the measured tem...

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Bibliographic Details
Published inJournal of crystal growth Vol. 140; no. 3-4; pp. 429 - 431
Main Authors Mikami, Makoto, Park, Kwang-Soon, Noda, Yasutoshi, Furukawa, Yoshitaka
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.1994
Elsevier
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
CVD
Inorganic compounds
Semiconductor materials
Organometallic compounds
Transition element compounds
Reaction mechanism
Binary compounds
Zinc selenides
Kinetics
Crystal growth from vapors
Experimental study
Radicals
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Summary:Radical-assisted metalorganic chemical vapor deposition (MOCVD) of ZnSe has been performed by using diethylzinc (DEZn) and diethylselenide (DESe) as a source and azo-t-butane ((t-C4H9)2N2) and nitrogen trifluoride (NF3) as co-reactants. The growth rate was significantly increased in the measured temperature range of 623 to 723 K.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)90320-4