Extraction of geometry-related interconnect variation based on parasitic capacitance data
A new interconnect parasitic extraction flow considering geometry-related variation has been proposed in this letter. The 42 interconnect capacitance loads were fabricated by 55-nm process technology and measured to characterize geometric variation. According to the new extraction flow, interconnect...
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Published in | IEEE electron device letters Vol. 35; no. 10; pp. 980 - 982 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.10.2014
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Subjects | |
Online Access | Get full text |
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