High quality vanadium dioxide films prepared by an inorganic sol-gel method

• Published in: Materials research bulletin Vol. 31; no. 3; pp. 335 - 340
• Main Authors: Yin, Dachuan, Xu, Niankan, Zhang, Jingyu, Zheng, Xiulin
• Format: Journal Article
• Language: English
• Published: London Elsevier Ltd 01.03.1996; Amsterdam Elsevier Science
• Subjects: A. oxides; A. thin films; B. sol-gel chemistry; C. X-ray diffraction; Cross-disciplinary physics: materials science; rheology; D. electrical properties; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; B. sol-gel chemistry; D. electrical properties; A. oxides; A. thin films; C. X-ray diffraction; Thin films; Vanadium oxides; Inorganic compounds; Electrical properties; Transition element compounds; Binary compounds; Crystal growth from solutions; XRD; Experimental study; Sol-gel process; Electric conductivity
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/0025-5408(95)00191-3

A novel preparation method we call the inorganic sol-gel method was developed to produce vanadium dioxide (VO 2) thin films which exhibit an apparently reversible electrical resistance switching at about 60 °C. This method comprises the following processes: (1) V 2O 5 sols preparation by a quenching method, (2) V 2O 5 gel films preparation by dip-coating or spin-coating on glass substrates, and (3) the resulting films by vacuum heat-treatment. XRD analysis was used to study the existence of VO 2 crystal in the films and ESCA was utilized to investigate the valence change in the films. The results showed that V(V) was reduced to lower valence vanadium. The abrupt electrical resistance change, up to 4–5 orders of magnitude at about 60 °C, which is a unique property of vanadium dioxide, was attributed to the existence of V(IV) in the films. The drop of the resistance of the films was larger than previously reported data, which is only 2–3 orders of magnitude when prepared on non-crystal substrates. It was also found that pretreatment of the gel films in water vapor at about 150 °C can lower the heat-treatment temperature for obtaining the desired films.