Interface structure of a GaAs-AlAs superlattice MBE grown on a GaAs vicinal surface

A GaAs-AlAs superlattice MBE grown onto a GaAs vicinal surface misoriented by 3° from the (001) plane toward the (111) Ga plane, was investigated using different transmission electron microscopy techniques, such as (002) dark field image, transmission electron diffraction and high resolution electro...

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Bibliographic Details
Published inJournal of crystal growth Vol. 100; no. 3; pp. 529 - 538
Main Authors Poudoulec, A., Guenais, B., D'Anterroches, C., Regreny, A.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.1990
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Crystal growth
High resolution
Semiconductor materials
Electron diffraction
Solid solid interface
Experimental study
Inorganic compound
Thin film
Gallium Arsenides
Interface structure
Aluminium Arsenides
Dark field microscopy
Transmission electron microscopy
Molecular beam condensation
Superlattice
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Summary:A GaAs-AlAs superlattice MBE grown onto a GaAs vicinal surface misoriented by 3° from the (001) plane toward the (111) Ga plane, was investigated using different transmission electron microscopy techniques, such as (002) dark field image, transmission electron diffraction and high resolution electron microscopy together with image simulation. Under high resolution electron microscopy, we describe the interface structure. We evaluate the terrace width distribution showing the different behaviour of top and bottom interfaces. Moreover, some typical step contrast bring informations about the step front structure.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(90)90254-I