Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth

• Published in: Journal of crystal growth Vol. 126; no. 4; pp. 707 - 717
• Main Authors: Nagamune, Y., Tsukamoto, S., Nishioka, M., Arakawa, Y.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.1993; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Quantum dot; Temperature; Patterning; Semiconductor materials; Epitaxy; Aluminium Gallium Arsenides Mixed; Organometallic compound; Experimental study; Chemical vapor deposition; Inorganic compound; Surface; Gallium Arsenides; Nanometer scale; Selective growth; Chemical composition; Masking; Kinetics; Chemical diffusion
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(93)90822-E

Nanometer-scale GaAs dot-structures were fabricated by the selective epitaxial growth on SiO 2-masked GaAs (100) substrates with low pressure metalorganic chemical vapor deposition. The growth process and the mechanism were investigated using the growth rate distribution and a surface potential model. It was revealed that the growth rates of the crystal planes change in dependence on the existence of other planes with faster growth rates, and that the in-plane migration is an important factor in the growth process. Based on these characteristics and the study on AlGaAs dot-structure growth, GaAs dot-structures three-dimensionally surrounded by Al 0.4Ga 0.6As were fabricated. The clear photoluminescence peak from the dots with high quantum efficiency shows the usefulness of the fabrication technique for quantum dots.