Atomic layer epitaxy of GaAs by chemical beam epitaxy

We report a study of atomic layer epitaxy (ALE) using trimethyl-Ga and triethyl-Ga by chemical beam epitaxy. Reflection high energy electron diffraction is employed to monitor the formation of each individual monolayer directly. A limiting mechanism which inhibits the continual adsorption and pyroly...

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Bibliographic Details
Published inJournal of crystal growth Vol. 105; no. 1; pp. 155 - 161
Main Authors Chiu, T.H., Cunningham, J.E., Robertson, A., Malm, D.L.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.10.1990
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Gallium Arsenides
Reflection high energy electron diffraction
Epitaxy
Growth mechanism
Experimental study
Thin film
Surface structure
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Summary:We report a study of atomic layer epitaxy (ALE) using trimethyl-Ga and triethyl-Ga by chemical beam epitaxy. Reflection high energy electron diffraction is employed to monitor the formation of each individual monolayer directly. A limiting mechanism which inhibits the continual adsorption and pyrolysis on a surface saturated with Ga-alkyl is found to exists for a short period of time, depending on the growth temperature. The dynamical evolution of the surface reconstruction indicates that a saturation coverage of the Ga-alkyls instead of Ga atoms is responsible for the limiting mechanism.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(90)90354-N