Demonstration of a 77-GHz heterojunction bipolar transferred electron device

We demonstrate for the first time a heterojunction bipolar transferred electron device (HBTED), a device with a bipolar transistor-like structure in which Gunn oscillations occur. The use of a graded doping profile in the collector region is, we believe, a key factor in the device design. AlGaAs/GaA...

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Bibliographic Details
Published inIEEE electron device letters Vol. 21; no. 1; pp. 2 - 4
Main Authors Twynam, J.K., Yagura, M., Takahashi, N., Suematsu, E., Sato, H.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aluminum gallium arsenides
Bipolar transistors
Devices
Diodes
Doping profiles
Electrons
Frequency
Gallium arsenide
Gallium arsenides
Gunn devices
Heterojunctions
Injection-locked oscillators
Millimeter wave transistors
Oscillations
Terminals
Transferred electron devices
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Summary:We demonstrate for the first time a heterojunction bipolar transferred electron device (HBTED), a device with a bipolar transistor-like structure in which Gunn oscillations occur. The use of a graded doping profile in the collector region is, we believe, a key factor in the device design. AlGaAs/GaAs HBTEDs fabricated on semi-insulating GaAs substrates exhibit free-running oscillations at a frequency of around 77 GHz. The third (emitter) terminal enables this device to be injection-locked and to function as a self-oscillating mixer.
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.817434