Ion-beam-induced electrical conductivity in plasma-polymerized aniline film

Plasma-polymerized organic films starting from aniline have been prepared. Characteristics of the films have been examined in detail using FT-IR, X-ray photoelectron spectroscopy (XPS), near-IR to UV spectroscopy and nuclear analysis techniques. While irradiation by 100 keV Ar + ions at high fluence...

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Bibliographic Details
Published inSynthetic metals Vol. 68; no. 2; pp. 125 - 131
Main Authors Tong, Zhi Shen, Wu, Mei Zhen, Pu, Tian Shu, Zhou, Fu, Liu, Hui Zhen
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 1995
Amsterdam Elsevier Science
New York, NY
Subjects
Aniline
Applied sciences
Conductivity
Electrical, magnetic and optical properties
Exact sciences and technology
Ion beam
Organic polymers
Physicochemistry of polymers
Plasma
Properties and characterization
Conductivity
Ion beam
Plasma
Aniline
Film
Ion implantation
Electrical conductivity
Electrical properties
Fluence
Doping
Experimental study
Property processing relationship
Argon ion
Glow discharge polymerization
Optical properties
Electrical conductor
Aniline polymer
Iodine ion
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Summary:Plasma-polymerized organic films starting from aniline have been prepared. Characteristics of the films have been examined in detail using FT-IR, X-ray photoelectron spectroscopy (XPS), near-IR to UV spectroscopy and nuclear analysis techniques. While irradiation by 100 keV Ar + ions at high fluence induces electrical conduction due to damage, doping of the plasma-polymerized aniline film with 24 keV I + implantation at a fluence of 1 × 10 16 ions/cm 2 results in a decrease of electrical resistivity by twelve orders of magnitude. A threshold-like dependence of resistivity on the ion fluence has been found for the plasma-polymerized film irradiated by 100 keV Ar + ions, similar to conventional polymers.
ISSN:0379-6779
1879-3290
DOI:10.1016/0379-6779(94)02281-3