An electrically and optically gate-controlled Schottky/2DEG varactor

A novel gate-controlled varactor is reported. The three-terminal varactor is a modulation-doped heterostructure of AlGaAs/GaAs with two Schottky contacts directly made to a two-dimensional electron gas (2DEG). The third, gate, contact is formed from highly doped n/sup +/ GaAs material to allow an op...

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Bibliographic Details
Published inIEEE electron device letters Vol. 21; no. 10; pp. 473 - 475
Main Authors Anwar, A., Nabet, B., Culp, J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aluminum gallium arsenides
Capacitance
Contacts
Electric potential
Electron optics
Epitaxial layers
Gallium arsenide
Gallium arsenides
Gates
Optical mixing
Optical modulation
Schottky barriers
Varactors
Voltage
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Summary:A novel gate-controlled varactor is reported. The three-terminal varactor is a modulation-doped heterostructure of AlGaAs/GaAs with two Schottky contacts directly made to a two-dimensional electron gas (2DEG). The third, gate, contact is formed from highly doped n/sup +/ GaAs material to allow an open optical window that can be used for optical gating and mixing. Structure capacitance is less than 1 pF and a change of more than 30% from the zero bias capacitance is observed with the applied gate voltage. The capacitance also increases proportionally with applied light and inversely with the terminal voltage.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.870605