High-performance self-aligned (Al,Ga)As/(In,Ga)As pseudomorphic HIGFETs

• Published in: IEEE electron device letters Vol. 10; no. 5; pp. 225 - 226
• Main Authors: Abrokwah, J.K., Stephens, J.M.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.1989; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuits; Electronics; Exact sciences and technology; Fabrication; FETs; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Rapid thermal annealing; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Threshold voltage; Transconductance; Transistors; Very large scale integration; Performance evaluation; Field effect transistor; Aluminium Gallium Arsenides Mixed; Gallium Indium Arsenides Mixed; Isolated gate field effect transistor; Heterojunction transistor
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.31728

Transconductance as high as 676 mS/mm at 300 K was observed to 0.7*10- mu m/sup 2/ n-channel devices (HIGFETs) made on epilayers with Al/sub 0.3/Ga/sub 0.7/As insulator thickness of 200 AA and In/sub 0.15/Ga/sub 0.85/As channel thickness of 150 AA. An FET K value (K=W/sub g/U epsilon /2aL/sub g/) as large as 10.6 mA/V/sup 2/ was also measured from another device with transconductance of 411 mS/mm. The high K values are achieved under normal FET operation without hole-injection or drain-avalanche breakdown effects. These results demonstrate the promise of pseudomorphic (Al,Ga)As/(In,Ga)As HIGFETs for high-performance circuit applications.< >