A 60 GHz Phase Shifter Integrated With LNA and PA in 65 nm CMOS for Phased Array Systems

This paper presents the design of a 60 GHz phase shifter integrated with a low-noise amplifier (LNA) and power amplifier (PA) in a 65 nm CMOS technology for phased array systems. The 4-bit digitally controlled RF phase shifter is based on programmable weighted combinations of I/Q paths using digital...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 45; no. 9; pp. 1697 - 1709
Main Authors Yikun Yu, Baltus, P G M, de Graauw, A, van der Heijden, E, Vaucher, C S, van Roermund, A H M
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.09.2010
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:This paper presents the design of a 60 GHz phase shifter integrated with a low-noise amplifier (LNA) and power amplifier (PA) in a 65 nm CMOS technology for phased array systems. The 4-bit digitally controlled RF phase shifter is based on programmable weighted combinations of I/Q paths using digitally controlled variable gain amplifiers (VGAs). With the combination of an LNA, a phase shifter and part of a combiner, each receiver path achieves 7.2 dB noise figure, a 360° phase shift range in steps of approximately 22.5°, an average insertion gain of 12 dB at 61 GHz, a 3 dB-bandwidth of 5.5 GHz and dissipates 78 mW. Consisting of a phase shifter and a PA, one transmitter path achieves a maximum output power of higher than +8.3 dBm, a 360° phase shift range in 22.5° steps, an average insertion gain of 7.7 dB at 62 GHz, a 3 dB-bandwidth of 6.5 GHz and dissipates 168 mW.
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ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2010.2051861