The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits

This paper analyzes the effects of Ge profile shape on the bias and temperature characteristics of advanced UHV/CVD SiGe heterojunction bipolar transistors (HBTs). The widely used bandgap reference (BGR) design equation and a more general analytical expression incorporating Ge grading developed in t...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 47; no. 2; pp. 292 - 298
Main Authors Salmon, S.L., Cressler, J.D., Jaeger, R.C., Harame, D.L.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.02.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bias
Devices
Electric potential
Evaluation
Germanium
Heterojunction bipolar transistors
Mathematical analysis
Silicon germanides
Spices
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Summary:This paper analyzes the effects of Ge profile shape on the bias and temperature characteristics of advanced UHV/CVD SiGe heterojunction bipolar transistors (HBTs). The widely used bandgap reference (BGR) design equation and a more general analytical expression incorporating Ge grading developed in this work are used to compare silicon devices to their SiGe counterparts. Theory, device measurements, and SPICE simulations are used to investigate the impact of Ge grading on SiGe HBT precision voltage references. It is concluded that conventional SPICE can be used to account for Ge grading effects in SiGe HBT modeling. Sufficient Ge grading can have a significant impact on the accuracy of precision voltage references, particularly at reduced temperatures, and thus warrants attention.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.822270