Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices
In this paper we report Al/CdSeZnS coreshell quantum dot/AlO x /CdSeZnS coreshell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of 1000. The facile solution processed device exhibited excellent endurance characteristics for 200000 switching cycles. Retention tests...
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Published in | Physical chemistry chemical physics : PCCP Vol. 15; no. 3; pp. 12762 - 12766 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
14.08.2013
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper we report Al/CdSeZnS coreshell quantum dot/AlO
x
/CdSeZnS coreshell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of 1000. The facile solution processed device exhibited excellent endurance characteristics for 200000 switching cycles. Retention tests showed good stability for over 20000 s and the devices are reproducible. A memory operating mechanism is proposed based on charge trappingdetrapping in coreshell quantum dots with AlO
x
acting as a barrier leading to Coulomb blockade.
I
V
characteristics of a three terminal device fabricated with the additional terminal wired-out from the middle AlO
x
layer supports the proposed charge trapping mechanism.
Facile solution processed coreshell quantum dot based NVM devices with a large ON/OFF ratio, 20000 s retention and 200000 cycles of operation. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/c3cp50216c |