Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices

• Published in: Physical chemistry chemical physics : PCCP Vol. 15; no. 3; pp. 12762 - 12766
• Main Authors: Kannan, V, Rhee, J. K
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 14.08.2013
• Subjects: Charge; Chemistry; Data storage; Devices; Exact sciences and technology; General and physical chemistry; Indium tin oxide; Memory devices; Quantum dots; Switching; Terminals; Trapping; Quantum dot; Stability; Support; Device; Transition element compounds; Retention; Volatiles; Mechanism
• ISSN: 1463-9076; 1463-9084
• DOI: 10.1039/c3cp50216c

In this paper we report Al/CdSeZnS coreshell quantum dot/AlO x /CdSeZnS coreshell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of 1000. The facile solution processed device exhibited excellent endurance characteristics for 200000 switching cycles. Retention tests showed good stability for over 20000 s and the devices are reproducible. A memory operating mechanism is proposed based on charge trappingdetrapping in coreshell quantum dots with AlO x acting as a barrier leading to Coulomb blockade. I V characteristics of a three terminal device fabricated with the additional terminal wired-out from the middle AlO x layer supports the proposed charge trapping mechanism. Facile solution processed coreshell quantum dot based NVM devices with a large ON/OFF ratio, 20000 s retention and 200000 cycles of operation.