Formation of a monolayer h-BN nanomesh on Rh (111) studied using in-situ STM

As a member of the 2D family of materials, h -BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h -BN can be synthesized on Rh (111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneli...

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Bibliographic Details
Published inScience China. Physics, mechanics & astronomy Vol. 61; no. 7; p. 76811
Main Authors Dong, GuoCai, Zhang, Yi, Frenken, Joost W. M.
Format Journal Article
LanguageEnglish
Published Beijing Science China Press 01.07.2018
Springer
Springer Nature B.V
Subjects
Astronomy
Boron nitride
Classical and Continuum Physics
Fractals
Graphene
Growth kinetics
Microscopy
Monolayers
Observations and Techniques
Physics
Physics and Astronomy
Scanning tunneling microscopy
Substrates
Temperature
STM
nanomesh
hexagonal boron nitride
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Summary:As a member of the 2D family of materials, h -BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h -BN can be synthesized on Rh (111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy (STM), we directly observed the formation of h in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h -BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h -BN overlayer grown on the Rh surface.
ISSN:1674-7348
1869-1927
DOI:10.1007/s11433-017-9169-7