A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell

A planar type polysilicon thin-film transistor (poly-Si TFT) EEPROM cell with electron cyclotron resonance (ECR) N/sub 2/O-plasma oxide has been developed with a low temperature (/spl les/400/spl deg/C) process. The poly-Si TFT EEPROM cell has an initial threshold voltage shift of 4 V for programmin...

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Bibliographic Details
Published inIEEE electron device letters Vol. 21; no. 6; pp. 304 - 306
Main Authors Oh, Jung-Hoon, Chung, Hoon-Ju, Lee, Nae-In, Han, Chul-Hi
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Annealing
Cyclotrons
Driver circuits
EEPROM
Electrons
Endurance
EPROM
Glass
Oxides
Plasma temperature
Semiconductor devices
Substrates
Thin film transistors
Threshold voltage
Transistors
Voltage
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Summary:A planar type polysilicon thin-film transistor (poly-Si TFT) EEPROM cell with electron cyclotron resonance (ECR) N/sub 2/O-plasma oxide has been developed with a low temperature (/spl les/400/spl deg/C) process. The poly-Si TFT EEPROM cell has an initial threshold voltage shift of 4 V for programming and erasing voltages of 11 V and -11 V, respectively. Furthermore, the poly-Si TFT EEPROM cell maintains the threshold voltage shift of 4 V after 100 000 program/erase cycles. The excellent high endurance of the fabricated poly-Si TFT EEPROM cell is attributed to the ECR N/sub 2/O-plasma oxide with good charge-to-breakdown (Qbd) characteristics.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.843158