An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si

• Published in: IEEE transactions on electron devices Vol. 47; no. 3; pp. 643 - 645
• Main Authors: Chindalore, G., Shih, W.-K., Jallepalli, S., Hareland, S.A., Tasch, A.F., Maziar, C.M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Devices; Doping; Mathematical analysis; Metal oxide semiconductors; Oxides; Quantum mechanics; Silicon; Simulation
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.824741

This work presents for the first time experimental results for the extraction of the increase in the effective electrical oxide thickness (/spl Delta/t/sub ox/=t/sub ox,expt/-t/sub ox,physical/) in MOS accumulation layers with heavily doped substrates due to quantum mechanical (QM) effects, using experimentally measured MOS capacitance-voltage (C-V) characteristics and experimentally verified fullband self-consistent calculations. In addition, the fullband self-consistent simulations have been extended to accumulation regions, and the experimental results for the accumulation region have been compared with simulations. It has been shown that at moderate to high doping levels, /spl Delta/t/sub ox/ is as much as 0.4 to 0.5 nm for both electrons and holes, whereas for very high doping levels (>1/spl times/10/sup 19/ cm/sup -3/) /spl Delta/t/sub ox/ approaches zero. Thus, the experimental accumulation capacitance is predicted sufficiently well by the classical analysis itself.