Estimation of diffusion coefficient by photoemission electron microscopy in ion-implanted nanostructures

• Published in: Applied surface science Vol. 256; no. 2; pp. 536 - 540
• Main Authors: Batabyal, R., Patra, S., Roy, A., Roy, S., Bischoff, L., Dev, B.N.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30.10.2009; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffusion in nanostructures; Exact sciences and technology; Nanostructures fabricated by focused ion beam; Photoemission electron microscopy; Physics; Diffusion in nanostructures; Photoemission electron microscopy; Nanostructures fabricated by focused ion beam; Ion implantation; Photoelectron emission; Nanostructures; Diffusion coefficient; Diffusion; Electron microscopy; Ion beams
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2009.08.022

We have fabricated parallel stripes of nanostructures in an n-type Si substrate by implanting 30 keV Ga + ions from a focused ion beam (FIB) source. Two sets of implantation were carried out. In one case, during implantation the substrate was held at room temperature and in the other case at 400 °C. Photoemission electron microscopy (PEEM) was carried out on these samples. The implanted parallel stripes, each with a nominal dimension of 4000 nm × 100 nm, appear as bright regions in the PEEM image. Line scans of the intensities from the PEEM image were recorded along and across these stripes. The intensity profile at the edges of a line scan is broader for the implantation carried out at 400 °C compared to room temperature. From the analysis of this intensity profile, the lateral diffusion coefficient of Ga in silicon was estimated assuming that the PEEM intensity is proportional to Ga concentration. The diffusion coefficient at 400 °C has been estimated to be ∼1.3 × 10 −15 m 2/s. Across the stripes an asymmetric diffusion profile has been observed, which has been related to the sequence of implantation of these stripes and the associated defect distribution due to lateral straggling of the implanted ions.