Formation and optical properties of Cr-doped CdTe/ZnTe nanostructures on ZnTe substrates by molecular beam epitaxy

• Published in: Physica status solidi. C no. 4; pp. 1242 - 1245
• Main Authors: Godo, K., Chang, J. H., Makino, H., Hanada, T., Goto, H., Yao, T., Goto, T.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.07.2003; WILEY‐VCH Verlag
• Subjects: 61.14.Hg; 78.55.Et; 78.67.Hc
• ISSN: 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200303058

We study the growth and optical properties of Cr‐doped CdTe/ZnTe nanostructures grown on ZnTe (001) substrates by molecular beam epitaxy. In‐situ reflection high‐energy electron diffraction is used to study the growth processes and strain relaxation behaviors of Cr‐doped CdTe quantum dots (QDs). After 4.5�ML deposition, the surface lattice parameter begins to increase remarkably, which indicates that the two‐dimensional growth mode is terminated and the CdTe layer grows in a three‐dimensional mode. Low temperature photoluminescence spectra of Cr‐doped CdTe QDs (Tcr = 900 °C) show a broad emision. With increasing the Cr cell temperature above 1000 °C, the luminescence from CdTe QDs disappears and the broad luminescence at around 1.6 eV becomes dominant.