Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric

• Published in: ETRI journal Vol. 20; no. 2; pp. 241 - 249
• Main Authors: Lyu, Jong‐Son, Jeong, Jin‐Woo, Kim, Kwang‐Ho, Kim, Bo‐Woo, Yoo, Hyung Joun
• Format: Journal Article
• Language: English
• Published: Taejon Electronics and Telecommunications Research Institute 01.06.1998
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ternary compound; Ferroelectric device; Voltage current curve; Circuit design; Dielectric materials; Magnesium Fluorine; Transistor; Aluminium; Semiconductor device; Barium Fluorine; Non volatile memory; Coercive force; Polysilicon; Electrical characteristic
• ISSN: 1225-6463; 2233-7326
• DOI: 10.4218/etrij.98.0198.0208

The structure and electrical characteristics of metal‐ferroelectric‐semiconductor FET (MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/ drain electrodes and BaMgF4 film as a gate dielectric. The polysilicon source and drain were built‐up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about 0.6 μC/cm2 and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I ‐ V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.