Design of a temperature-stable RF MEM capacitor

This paper presents a novel temperature-compensated two-state microelectromechanical (MEM) capacitor. The principle to minimize temperature dependence is based on geometrical compensation and can be extended to other devices such as MEM varactors. The compensation structure eliminates the effect of...

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Bibliographic Details
Published inJournal of microelectromechanical systems Vol. 13; no. 5; pp. 705 - 714
Main Authors Nieminen, H., Ermolov, V., Silanto, S., Nybergh, K., Ryhanen, T.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Capacitance
Capacitors
Compensation
Compressive stress
Design engineering
Devices
Electric potential
Electrodes
Quality factor
Radio frequency
Residual stresses
Robustness
Temperature dependence
Tensile stress
Thermal stresses
Voltage
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Summary:This paper presents a novel temperature-compensated two-state microelectromechanical (MEM) capacitor. The principle to minimize temperature dependence is based on geometrical compensation and can be extended to other devices such as MEM varactors. The compensation structure eliminates the effect of intrinsic and thermal stress on device operation. This leads to a temperature-stable device without compromising the quality factor (Q) or the voltage behavior. The compensation structure increases the robustness of the devices, but does not require any modifications to the process. Measurement results verify that the OFF and ON capacitance change is less than 6% and the pull-in voltage is less than 5% when the temperature is varied from -30 to +70/spl deg/C.
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ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2004.832192