Carrier lifetime dependence on temperature and proton irradiation in 4H-SiC device: an experimental law
The study focuses on analysing the high-level carrier lifetime (τ HL ) in 4H silicon carbide (4H-SiC) PiN diodes under varying temperatures and proton implantation doses. The objective is to identify an empirical law applicable in technology computer-aided design (TCAD) modelling for SiC devices, de...
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Published in | IEEE access Vol. 12; p. 1 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Piscataway
IEEE
01.01.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | The study focuses on analysing the high-level carrier lifetime (τ HL ) in 4H silicon carbide (4H-SiC) PiN diodes under varying temperatures and proton implantation doses. The objective is to identify an empirical law applicable in technology computer-aided design (TCAD) modelling for SiC devices, describing the dependence of carrier lifetime on temperature to gain insights into how irradiation dose may influence the τ HL . We electrically characterize diodes of different diameters subjected to different proton irradiation doses and examine the variations in current-voltage (I-V) and ideality factor (n) curves under various irradiation conditions. The effects of proton irradiation on the epitaxial layer are analysed through capacitance-voltage (C-V) measurements. We correlate the observed effects on I-V, n, and C-V curves to the hypothesis of formation of acceptor-type defects related to carbon vacancies, specifically the Z 1/2 defects generated during the irradiation process. The impact of irradiation on carrier lifetime is investigated by measuring τ HL using the open circuit voltage decay (OCVD) technique at different temperatures on diodes exposed to various H + irradiation doses with constant ion energy. This investigation reveals the presence of a proportional relationship between 1/τ HL and the dose of irradiated protons: the proportionality coefficient, referred to as the damage coefficient (K T ), exhibits an Arrhenius-type dependence on temperature. OCVD-measured lifetime on the various diodes demonstrates a power-law dependence of lifetime on temperature. The exponent of this dependence varies with the irradiation dose, notably showing an increase in temperature dependence at the highest H + ion dose. This suggests a threshold-like dependence on H+ irradiation dose in the τ HL -temperature relationship. |
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ISSN: | 2169-3536 2169-3536 |
DOI: | 10.1109/ACCESS.2024.3405382 |