Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

• Published in: Thin solid films Vol. 522; pp. 33 - 35
• Main Authors: Sun, J.W., Jokubavicius, V., Liljedahl, R., Yakimova, R., Juillaguet, S., Camassel, J., Kamiyama, S., Syväjärvi, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.2012; Elsevier
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Crystals; Diffraction; Donor acceptor pair emission; Doping; Electronics; Emission; Exact sciences and technology; Luminescence; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Optoelectronic devices; Other luminescence and radiative recombination; Photoluminescence; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SiC; Silicon carbide; Theory and models of film growth; White light; SiC; Photoluminescence; Donor acceptor pair emission; Temperature dependence; Epitaxial layers; Bragg diffraction; Luminescence; Light emitting diodes; Optoelectronic devices; Crystal growth from vapors; XRD; Quantum yield; Crystal perfection; Silicon carbide; Fluorescent material; Experimental design; Optical properties; Rocking curve; Growth mechanism; Boron additions; Nitrogen additions; Bound exciton; Crystal structure
• ISSN: 0040-6090; 1879-2731; 1879-2731
• DOI: 10.1016/j.tsf.2012.02.012

The high quantum efficiency of donor–acceptor-pair emission in N and B co-doped 6H–SiC opens the way for SiC to constitute as an efficient light-emitting medium for white light-emitting diodes. In this work, we evidence room temperature luminescence in N and B co-doped 6H–SiC fluorescent material grown by the Fast Sublimation Growth Process. Three series of samples, with eight different N and B doping levels, were investigated. In most samples, from photoluminescence measurements a strong N–B donor–acceptor-pair emission band was observed at room temperature, with intensity dependent on the nitrogen pressure in the growth chamber and boron doping level in the source. Low temperature photoluminescence spectra showed that N bound exciton peaks exhibited a continuous broadening with increasing N2 pressure during the growth, unambiguously indicating an opportunity to control the N doping in the epilayer by conveniently changing the N2 pressure. Finally, the crystal quality of the N and B doped 6H–SiC was evaluated by X-ray diffraction measurements. The ω rocking curves of (0006) Bragg diffractions from the samples grown with lower and higher N2 pressure show almost the same value of the full width at half maximum as that collected from the substrate. This suggests that the N and B doping, which is expected to give rise to an efficient donor–acceptor-pair emission at room temperature, does not degrade the crystal quality.