Effect of Annealing Atmosphere on the Structural and Optical Properties of ZnO Thin Films on Si (100) Substrates Grown by Atomic Layer Deposition

ZnO thin films were deposited on Si (100) substrates by atomic layer deposition. Annealing treatments for the as-deposited films were performed in nitrogen, oxygen, argon and air at 800 °C, respectively. The influence of annealing atmosphere on the structural and optical properties of the ALD-ZnO th...

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Bibliographic Details
Published inJournal of nano research Vol. 37; pp. 92 - 98
Main Authors Wang, Gui Gen, Zhang, Hua Yu, Tian, J.L.
Format Journal Article
LanguageEnglish
Published Trans Tech Publications Ltd 01.01.2016
Subjects
Annealing Atmosphere
ZNO
X-Ray Diffraction
Atomic Layer Deposition
Photoluminescence
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Summary:ZnO thin films were deposited on Si (100) substrates by atomic layer deposition. Annealing treatments for the as-deposited films were performed in nitrogen, oxygen, argon and air at 800 °C, respectively. The influence of annealing atmosphere on the structural and optical properties of the ALD-ZnO thin films was investigated by XRD, SEM, and PL. Results reveals that the films annealed in oxygen atmosphere exhibited excellent crystallinity (polycrystalline hexagonal wurtzite structure with a strong (002) preferred crystallographic planes), relatively smooth surface and better luminescence performance, which means that O2 is the most suitable annealing atmosphere for obtaining high quality ALD-ZnO thin films.
Bibliography:Special topic volume with invited peer reviewed papers only
ISSN:1662-5250
1661-9897
1661-9897
DOI:10.4028/www.scientific.net/JNanoR.37.92