A self-biased neutron detector based on an SiC semiconductor for a harsh environment

• Published in: Applied radiation and isotopes Vol. 67; no. 7; pp. 1204 - 1207
• Main Authors: Ha, Jang Ho, Kang, Sang Mook, Park, Se Hwan, Kim, Han Soo, Lee, Nam Ho, Song, Tae-Yung
• Format: Journal Article
• Language: English
• Published: England Elsevier Ltd 01.07.2009
• Subjects: Carbon Compounds, Inorganic; Equipment Design; Neutron measurement; Neutrons; Radiation Monitoring - instrumentation; Semiconductor; Semiconductors; Silicon carbide; Silicon Compounds; Solid-state detector; Surface barrier detector; Neutron measurement; Semiconductor; Silicon carbide; Surface barrier detector; Solid-state detector; 29.40.Wk
• ISSN: 0969-8043; 1872-9800
• DOI: 10.1016/j.apradiso.2009.02.013

Neutron detector based on radiation-hard semiconductor materials like SiC, diamond and AlN has recently emerged as an attractive device for an in-core reactor neutron flux monitoring, a spent fuel characterization, and a home land security application. For the purpose of field measurement activity, a radiation detector having a low-power consumption, a mechanical stability and a radiation hardness is required. Our research was focused on the development of a radiation-resistive neutron semiconductor detector based on a wide band-gap SiC semiconductor. And also it will be operated at a zero-biased voltage using a strong internal electric field. The charge collection efficiency (CCE) was over 80% when the biased voltage was zero. When the biased voltage was applied above 20 V, the charge collection efficiency reached 100%.