Strengthening for sc-Si Solar Cells by Surface Modification With Nanowires

• Published in: Journal of microelectromechanical systems Vol. 20; no. 3; pp. 549 - 551
• Main Authors: Chi-Nan Chen, Chuan-Torng Huang, Chen-Liang Chao, Hou, Max Ti-Kuang, Wen-Ching Hsu, Yeh, J A
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Bend strength; Cross-disciplinary physics: materials science; rheology; Curvature; Energy; Exact sciences and technology; Fracture mechanics (crack, fatigue, damage...); Fundamental areas of phenomenology (including applications); Materials science; Mathematical analysis; Nanoscale materials and structures: fabrication and characterization; Nanotechnology; Nanowires; Natural energy; Neodymium; Nitrogen; Photovoltaic cells; Photovoltaic conversion; Physics; Silicon; Silicon substrates; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; solar energy and stress; Solid mechanics; Strengthening; Stress; Structural and continuum mechanics; Substrates; Surface treatment; Solar cell; Bending strength; Strengthening; Radius of curvature; solar energy and stress; Solar energy; Silicon; Nanowires; Single crystal; Nanotechnology; Surface treatment; Bending test
• ISSN: 1057-7157; 1941-0158
• DOI: 10.1109/JMEMS.2011.2127459

Bending strength of single-crystalline silicon (sc-Si) substrates enhanced by forming silicon nanowires (SiNWs) on the surfaces has been investigated for the application of sc-Si solar cells. As operated under the three-point-bending test, the 40-mm-long, 20-mm-wide, and 0.61-mm-thick sc-Si substrates show a high bending strength of 1.02 ± 0.11 GPa and maintain bulk properties. By this strengthening method, a hand-bent 6-in 0.23-mm-thick sc-Si solar cell shows the displacement of 35 mm and the curvature radius of 75 mm. Moreover, the bending strengths of strengthening sc-Si substrates for the SiNW depths of 1, 2, and 4 μm are 2.1, 4.3, and 6 times larger than that of pristine sc-Si substrates (i.e., 0.17 ± 0.01 GPa), respectively.